收藏本站
MUBW 75-06 A8
Output Inverter T1 - T6
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
V CES
V GES
I C25
I C80
T VJ = 25°C to 150°C
Continuous
T C = 25°C
T C = 80°C
600
± 20
100
65
V
V
A
A
RBSOA
V GE = ± 15 V; R G = 15 Ω ; T VJ = 125°C
Clamped inductive load; L = 100 μH
I CM = 150
V CEK ≤ V CES
A
IGBT (typ. at V GE = 15 V; T J = 125°C)
T1-T6
V 0 = 1.21 V; R 0 = 15 m Ω
t SC
(SCSOA)
V CE = V CES ; V GE = ± 15 V; R G = 15 Ω ; T VJ = 125°C
non-repetitive
10
μs
T7
V 0 = 1.06 V; R 0 = 36 m Ω
P tot
T C = 25°C
320
W
Diode (typ. at T J = 125°C)
D1-D6
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
D7
V 0 = 1.1 V; R 0 = 2 m Ω
V 0 = 1.1 V; R 0 = 12 m Ω
V CE(sat)
I C = 75 A; V GE = 15 V; T VJ = 25°C
min. typ. max.
2.0 2.5
V
D11-D16
V 0 = 0.85 V; R 0 = 5 m Ω
T VJ = 125°C
2.3
V
V GE(th)
I CES
I C = 1.5 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
4.5
6.5
1.4
V
mA
Thermal Response
T VJ = 125°C
1.5
mA
I GES
t d(on)
V CE = 0 V; V GE = ± 20 V
150
200
nA
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
R thJC
Inductive load, T VJ = 125°C
V CE = 300 V; I C = 75 A
V GE = ±15 V; R G = 15 Ω
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300V; V GE = 15 V; I C = 100 A
(per IGBT)
60
450
40
4.0
3.3
4.2
260
ns
ns
ns
mJ
mJ
nF
nC
0.39 K/W
IGBT (typ.)
T1-T6
C th1 = 0.177
C th2 = 1.228
T7
C th1 = 0.088
C th2 = 0.799
Diode (typ.)
J/K; R th1 = 0.293 K/W
J/K; R th2 = 0.097 K/W
J/K; R th1 = 0.583 K/W
J/K; R th2 = 0.167 K/W
D1-D6
C th1 = 0.138 J/K; R th1 = 0.48 K/W
Output Inverter D1 - D6
D7
C th2 = 0.957 J/K; R th2 = 0.13 K/W
Symbol
Conditions
Maximum Ratings
C th1 = 0.038 J/K; R th1 = 1.725 K/W
C th2 = 0.439 J/K; R th2 = 0.375 K/W
I F25
I F80
T C = 25°C
T C = 80°C
140
85
A
A
D11-D16
C th1 = 0.086 J/K; R th1 = 0.738 K/W
C th2 = 0.621 J/K; R th2 = 0.202 K/W
Symbol
Conditions
Characteristic Values
min. typ. max.
V F
I RM
t rr
I F = 75 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 60 A; di F /dt = -500 A/μs; T VJ = 125°C
V R = 300 V; V GE = 0 V
1.7
1.2
28
100
2.0
V
V
A
ns
R thJC
(per diode)
0.61 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2006 IXYS All rights reserved
20070912a
2-4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MUBW75-12T8 MODULE IGBT CBI E3
MUBW75-17T8 MODULE IGBT CBI E3
MURP20040CTG DIODE ULT FAST 400V 100A PWRTAP
MWI100-06A8 MOD IGBT SIXPACK RBSOA 600V E3
MWI100-12A8 MOD IGBT SIXPACK RBSOA 1200V E3
MWI100-12E8 MOD IGBT SIXPACK RBSOA 1200V E3
MWI100-12T8T MOD IGBT TRENCH SIXPACK E3
MWI15-12A6K MOD IGBT RBSOA SIXPACK E1
相关代理商/技术参数
MUBW75-12T8 功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUBW75-17T8 功能描述:分立半导体模块 75 Amps 1700V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MUC01 制造商:Cooper Bussmann 功能描述:MICROUSB CABLE CHARGESMART SNOWFLAKE - Bulk 制造商:COOPER INDUSTRIES 功能描述:MicroUSB Cable ChargeSMART SNOWFLAKE 制造商:COOPER BUSSMANN 功能描述:MICROUSB CABLE CHARGESMART SNOWFLAKE
MUC02 制造商:Cooper Bussmann 功能描述:MICROUSB CABLE CHARGESMART MIDNIGHT - Bulk 制造商:COOPER INDUSTRIES 功能描述:MicroUSB Cable ChargeSMART MIDNIGHT 制造商:COOPER BUSSMANN 功能描述:MICROUSB CABLE CHARGESMART MIDNIGHT
MUC03 制造商:Cooper Bussmann 功能描述:MICROUSB CABLE CHARGESMART HOT PINK - Bulk 制造商:COOPER BUSSMANN 功能描述:MICROUSB CABLE CHARGESMART HOT PINK
MUC04 制造商:Cooper Bussmann 功能描述:MICROUSB CABLE CHARGESMART GREEN APPLE - Bulk 制造商:COOPER BUSSMANN 功能描述:MICROUSB CABLE CHARGESMART GREEN APPLE
MUC05 制造商:Cooper Bussmann 功能描述:MICROUSB CABLE CHARGESMART BLUE - Bulk 制造商:COOPER BUSSMANN 功能描述:MICROUSB CABLE CHARGESMART BLUE
MUC06 制造商:Cooper Bussmann 功能描述:MICROUSB CABLE CHARGESMART RED TULIP - Bulk 制造商:COOPER BUSSMANN 功能描述:MICROUSB CABLE CHARGESMART RED TULIP